GaN Systems 是一家无晶圆厂半导体公司。系统设计师实现所有的氮化镓在电源转换和控制应用中的优点。为了克服硅在开关速度、温度、电压和电流的限制，GaN Systems 开发了具有最完整的范围，用于各种市场的氮化镓功率开关晶体管。GaN Systems独有的专利技术Island Technology® 使GaN的设计方法比其他更小而且更加高效，解决了今天的成本、性能以及可制造性的挑战。GaN Systems 公司总部设在加拿大渥太华。

由于其可移动的无晶圆模型以及其他创新，GaN Systems 还利用现有的多源制造工艺，使氮化氮很容易融入任何设计中。 GaN Systems由经验丰富的半导体团队运营，拥有数十年的行业经验和多次成功的记录。GaN Systems 在功率转换中采用的氮化镓比其他任何产品都要多。

GaN Systems生产一系列氮化镓高功率晶体管，用于消费，企业，工业，太阳能/风能/智能电网和运输电源转换应用。这些器件具有极低的导通电阻和可忽略不计的电荷存储，可实现超过当前硅基解决方案的开关效率，并为开关电源设计，逆变器，混合动力和电动汽车，电池管理和功率因数校正提供显着优势。

基于突破性的GaN系统器件设计IP，这些氮化镓器件使用低成本的GaN-on-silicon基础晶圆。

化合物半导体器件首次与硅器件相比具有成本竞争力，同时提供了极高的性能。

GaN Systems is the place electronics designers go to realize all the benefits of gallium nitride in their power conversion and control applications. To overcome silicon’s limitations in switching speed, temperature, voltage and current, the company develops the most complete range of gallium nitride power switching transistors for consumer, datacenter, industrial and transportation markets. GaN Systems’ unique Island Technology® addresses today’s challenges of cost, performance, and manufacturability resulting in devices that are smaller and more efficient than other GaN design approaches. A fabless power semiconductor company, GaN Systems is headquartered in Ottawa, Canada.

GaN Systems also leverages existing multi-sourced manufacturing processes due to its transportable, fabless model, and through additional innovations, makes it easy to incorporate gallium nitride into any design. GaN Systems is run by a seasoned semiconductor team with decades of industry experience and a track record of repeated success. GaN Systems stands to do more for gallium nitride adoption in power conversion than any other.

GaN Systems manufactures a range of Gallium Nitride high power transistors for consumer, enterprise, industrial, solar/wind/smartgrid, and transportation power conversion applications. Featuring exceptionally low on-resistance and negligible charge storage, these devices enable switching efficiencies well in excess of current silicon based solutions and offer dramatic benefits to switching power supply designs, inverters, hybrid and electric vehicles, battery management and power factor correction.

Based on the breakthrough GaN Systems device design IP, these gallium nitride devices use low cost GaN-on-silicon base wafers.

For the first time, compound semiconductor devices are cost competitive with silicon devices, while offering vastly superior performance.